HOME > Products > Front-End Wafer Fab Equipment > Ion Implantation Equipment >

Varian E500 Medium-Current Ion Implanter

Used Varian E500 medium-current ion implanter for 150 mm and 200 mm wafers. Exact E500 variant, energy range, source and end-station configuration require confirmation.

Varian E500 Medium-Current Ion Implanter EQUIPMENT IMAGE
Configuration Review Model and installed options
New / Used Supply Subject to project availability
Global Delivery Destination-based assessment
Technical RFQ Package and process matching

The Varian E500 is a trusted medium-current ion implanter, a workhorse for accurate semiconductor doping that delivers outstanding value for mature-node fabs. Built with Bernas ion source and high-resolution mass analyzer, it supports multiple dopants including boron, phosphorus and arsenic, offering flexible energy tuning to meet well formation, threshold adjustment and poly gate doping requirements.

Boasting precise dose control and superior beam uniformity, this implanter minimizes wafer-to-wafer variation and particle contamination during implantation. Its reliable beam monitoring system performs real-time feedback correction, securing consistent doping profiles across wafers. Equipped with proven electrostatic chuck and cooling platen, it effectively controls wafer heating and prevents thermal damage even under continuous high-throughput production.

Highly recommended for power semiconductors, discrete devices and MEMS manufacturing, this field-proven platform enjoys abundant spare parts and low operational cost. If you plan to expand doping capacity or replace legacy implantation tools, the Varian E500 serves as a cost-effective, production-ready solution with stable uptime and easy fab integration.

Varian E500 medium-current ion implanter

Varian E500 Main Specifications

ManufacturerVarian Semiconductor Equipment Associates
ModelE500
Equipment TypeMedium-Current Ion Implanter
Supported Wafer Sizes150 mm and 200 mm, according to the available equipment listing
Implant Current ClassMedium current
Machine VariantE500 variant and installed upgrade level must be confirmed from the nameplate
Energy RangeDepends on whether the machine is a standard, HP, EHP, EHPi or other configured version
Ion SourceInstalled source design and supported dopant species must be verified
Wafer End StationWafer size, scanning, tilt and rotation configuration must be confirmed
Dose ControlBeam monitoring, Faraday system and calibration status require inspection
Control PlatformController, workstation, software revision and communication interface vary by system
ConditionUsed semiconductor equipment
AvailabilitySubject to current stock, inspection and configuration confirmation

Varian E500 ion source and beamline

78795246-af11-4425-9668-b0f4af6d07ef