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BESI Datacon 8800 CHAMEO ultra plus AC

The BESI Datacon 8800 CHAMEO ultra plus AC is a benchmark C2W (Chip-to-Wafer) hybrid bonding system for advanced packaging, an ideal platform for Chiplet, 3D IC heterogeneous integration and Cu-Cu hybrid bonding processes.

BESI Datacon 8800 CHAMEO ultra plus AC EQUIPMENT IMAGE
Configuration Review Model and installed options
New / Used Supply Subject to project availability
Global Delivery Destination-based assessment
Technical RFQ Package and process matching

The BESI Datacon 8800 CHAMEO ultra plus AC is a benchmark C2W (Chip-to-Wafer) hybrid bonding system for advanced packaging, an ideal platform for Chiplet, 3D IC heterogeneous integration and Cu-Cu hybrid bonding processes.

Equipped with the Van Gogh high-precision optical alignment system, it delivers nanometer-level placement accuracy of 100 nm @ 3σ, perfectly meeting the stringent alignment requirements of fine-pitch interconnection. Its ISO 3 clean working chamber effectively controls particle contamination to secure high yield for thin wafers and ultra-thin die pick-and-place. Featuring dual bonding heads, it achieves a dry cycle throughput up to 2000 CPH. Integrated with in-line IR inspection, automatic nozzle change and EFEM automated wafer handling interface, the system offers robust process stability for both R&D prototyping and low-volume mass production.

This used unit has undergone comprehensive maintenance, motion axis calibration, optical alignment validation and full inspection of vacuum systems, with all core performance parameters verified. Compared with brand-new equipment, it significantly cuts capital expenditure, enabling enterprises to quickly set up hybrid bonding pilot lines and seize the R&D window for advanced packaging. Suitable for high-end packaging projects such as computing chips and memory stacking.

BESI Datacon 8800 CHAMEO ultra plus AC

CHAMEO ultra plus AC Specifications

SpecificationPublished Value
ProcessHybrid bonding
System Accuracy100 nm @ 3σ alignment worst corner GOG
Accuracy Self CheckSingle BMC kit
CleanlinessISO 3 in working area
ThroughputUp to 2,000 CPH, dry cycle
Substrate Wafer12-inch wafer through EFEM
Substrate Wafer Thickness0.5 to 2.0 mm
Component Supply12-inch film frame or 12-inch wafer carrier, silicon or glass carrier
Die Size0.5 × 0.5 mm to 33 × 28 mm
Die Thickness25 μm to 800 μm
Die EjectionNeedle, Multi Stage, UV on request

These are platform specifications. EFEM setup, inspection hardware, tool changing, die-ejection method, automation interface, and other installed options still need to be confirmed on the actual machine.