The BESI Datacon 8800 CHAMEO ultra plus AC hybrid bonding platform performs die-to-wafer and die-to-die stacking. Direct dielectric fusion bonding happens at room temperature. Mass annealing follows to form electrical connections. The process enables fine-pitch copper interconnects with sub-micron pads. Bonding starts at the dielectric interface, and thermal treatment strengthens the joint afterwards.
The platform delivers die-to-wafer alignment accuracy of 100 nm @ 3σ under worst corner conditions. Optional hardware upgrades this alignment performance to 200 nm. Maximum throughput hits 2,000 CPH in dry cycle mode. Its process chamber maintains ISO Class 3 cleanliness. Particle contamination causes voids along bonding interfaces, making clean conditions essential for consistent hybrid bonding results.
Die handling covers 25 µm to 800 µm thickness, with die sizes from 0.5 mm × 0.5 mm to 33 mm × 28 mm. The platform supports 12-inch (300 mm) wafers and 340 mm fan-out panel carriers. A sealed clean chamber encloses the bond zone, stabilizing the process environment during pick-and-place and bonding.
What separates the ultra plus from the standard CHAMEO comes down to three areas: tighter alignment accuracy (100 nm vs. 3 µm local accuracy on the standard CHAMEO), superior warpage control through dynamic vision correction, and higher throughput for volume production. The platform is built for heterogeneous integration and Chiplet assembly, where multiple die types from different sources need to be stacked with nano-level placement precision.

Key Specifications
| Parameter | Specification |
|---|---|
| Equipment Type | Hybrid bonding platform (flip chip / die-to-wafer) |
| Alignment Accuracy | 100 nm @ 3σ worst corner GOG |
| Die-to-Wafer Alignment | Up to 200 nm (optional configuration) |
| Throughput | Up to 2,000 CPH (dry cycle) |
| Die Size Range | 0.5 mm × 0.5 mm – 33 mm × 28 mm |
| Die Thickness | 25 µm – 800 µm |
| Wafer Size | 300 mm (12-inch) |
| FO-WLP Carrier | 300 mm / 340 mm |
| Cleanliness | ISO Class 3 in working area |
| Bonding Method | Room temperature direct fusion bonding of dielectric, followed by batch annealing |
| Interconnect Pitch | Down to 1 µm |
| Accuracy Self Check | Single BMC kit |
| Cleanroom Environment | ISO Class 5 (facility level) |
Configuration & Procurement Notes
The Datacon 8800 CHAMEO ultra plus AC is a configurable platform, and two units under the same model name can carry different alignment accuracy grades, vision system configurations, and wafer handling modules. If you are evaluating a used unit, these items determine whether it will meet your process requirements:
Alignment accuracy grade. Confirm whether the unit ships with the 100 nm @ 3σ configuration or the 200 nm die-to-wafer option. The accuracy grade is a hardware and calibration configuration, not a field upgrade.
Vision system version. Verify the vision system includes the dynamic warpage correction module. This is what separates the ultra plus from lower-tier CHAMEO models for production accuracy.
Wafer and carrier handling. Confirm the installed wafer table and carrier adapter match your wafer size (300 mm) and fan-out carrier format (300 mm / 340 mm).
Clean chamber configuration. Verify the ISO Class 3 working area is functional and that the chamber seals have been maintained. Cleanliness performance degrades if seals or filtration components are worn.
BMC self-check kit. Confirm the single BMC kit is included, as this affects the frequency of manual accuracy verification and the overall metrology workload.
Nozzle and tooling sets. Check which die pickup tooling is included. Tooling is die-size-dependent — a setup for 0.5 mm dies is not interchangeable with one for 33 mm dies.
Software and recipe compatibility. Verify that the installed software version supports your bonding recipes and that the bond program library is accessible.
Service history. Request maintenance records for the vision system, the bond arm, and the clean chamber filtration. For a platform operating at this accuracy level, calibration history is a strong predictor of remaining production life.