The SAMCO PD-3800L is a compact PECVD system engineered for low-temperature dielectric thin film deposition. It deposits silicon nitride, SiO₂ and silicon oxynitride films, commonly used for surface passivation and protective layers on power semiconductors.
Stable RF power control and optimized gas mixing deliver outstanding film uniformity across wafers. Its chamber design limits particle generation, ensuring clean deposition results for small-batch and pilot production.
With straightforward recipe setup and convenient chamber access for servicing, this tool offers great process flexibility. It is well suited for research labs and small-volume fabs to build reliable thin-film stacks.
SAMCO PD-3800L Main Specifications
| Manufacturer | SAMCO |
|---|---|
| Model | PD-3800L |
| Equipment Type | Load-Lock Batch PECVD System |
| Deposition Technology | Plasma-enhanced chemical vapor deposition |
| Maximum Processing Area | Approximately 360 mm diameter carrier-tray area |
| Published Wafer Loading | Up to 9 × 3-inch, 6 × 4-inch or 3 × 6-inch wafers, depending on the carrier tray |
| Published Film Materials | SiO2, SiN, SiON and amorphous silicon |
| Published Process Examples | SiH4-SiNx, SiH4-SiO2, liquid-precursor SiNx and TEOS-SiO2 |
| Wafer Loading | Load-lock chamber with tray-based batch processing |
| Control Interface | Touch-screen parameter control and recipe storage in the published platform |
| Condition | Used semiconductor equipment |
| Availability | Subject to current stock, carrier configuration and inspection confirmation |
