The SEN GSD III 90 is a proven batch-type high-current ion implanter, widely recognised as a workhorse for high-dose doping in mature semiconductor manufacturing. Adopting an optimised beamline architecture, it supports common dopants such as boron, phosphorus and arsenic, delivering stable high beam current for source/drain implantation and well formation on 150mm and 200mm wafers.
It features advanced beam profiling and real-time dose monitoring to maintain outstanding wafer-to-wafer uniformity. The gyroscopic end station enables dual-axis tilt adjustment, which minimises channeling effects and optimises doping distribution. Reliable vacuum control and plasma shower protection reduce particle generation and surface damage, ensuring consistent implant quality during long continuous production runs.
SEN GSD III 90 Main Specifications
| Manufacturer | SEN / Sumitomo Eaton Nova |
|---|---|
| Model | GSD III 90 |
| Alternative Model Style | NV-GSD III-90 |
| Equipment Type | High-Current Ion Implanter |
| Supported Wafer Sizes | 150 mm and 200 mm, according to the available listing |
| Implant Current Class | High current |
| Beamline Configuration | Installed source, analyzing magnet and acceleration configuration must be confirmed |
| Wafer Processing | Wafer disk and batch configuration depend on the installed end station |
| Implant Angle | Tilt and rotation capability must be verified from the available machine |
| Dose Monitoring | Faraday and dose-control configuration must be inspected and calibrated |
| Process Species | Supported ions depend on the source, gas box and beamline history |
| Condition | Used semiconductor equipment |
| Availability | Subject to current stock, inspection and configuration confirmation |
