The ASML XT 760F lithography system utilizes advanced projection optics and a dual-stage design to deliver reliable overlay accuracy and stable imaging performance for both 200mm and 300mm silicon substrates. Integrating features such as autofocus, wafer shape correction, and flexible illumination modes, the system ensures Critical Dimension (CD) uniformity across the entire wafer.
The equipment compensates for wafer warpage and reticle distortion, thereby minimizing pattern shift and edge defects during sequential exposure processes. Its high optical transmission helps maintain consistent productivity and provides a wide process window, making it an ideal choice for high-volume manufacturing.
Key Technical Parameters
| Item | Specification |
|---|---|
| Lithography Type | DUV Step & Scan |
| Wavelength | 248 nm KrF |
| Supported Wafer Size | 200 mm / 300 mm |
| Minimum Resolution | 0.13 μm |
| Overlay Accuracy | ≤12 nm |
| Maximum Throughput | 120 wafers/hour |
| Illumination Modes | Conventional, Annular, Dipole |
| Stage Architecture | Dual wafer stage |
Note: No official original datasheet is publicly released by ASML for the XT 760F model. All listed parameters refer to authentic industrial standard specifications of the ASML XT-series KrF lithography platform for commercial and production reference.
