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Used PVA TePla / Technics 660 Edge Isolation Plasma Etcher

Used 2008 PVA TePla / Technics 660 microwave plasma system configured for solar cell edge isolation etching, with a 350 mm stage and EBARA dry pump.

Used PVA TePla / Technics 660 Edge Isolation Plasma Etcher EQUIPMENT IMAGE
Configuration Review Model and installed options
New / Used Supply Subject to project availability
Global Delivery Destination-based assessment
Technical RFQ Package and process matching

When power device manufacturers require controlled wafer edge removal, the PVA TePla / Technics 660 serves as a dedicated microwave plasma etcher for edge isolation processing. Its 2.45GHz electrode-free microwave plasma eliminates surface leakage paths along the wafer rim, a critical step to boost breakdown voltage for silicon power chips.

Precision gas mass flow controllers and low-pressure vacuum environment deliver highly tunable edge etch depth. The rotating wafer stage ensures uniform removal around the full wafer perimeter while keeping damage to the active central device area to a minimum.

Unlike multi-purpose etch chambers, this system is purpose-built for edge isolation tasks. Its robust aluminium chamber design simplifies cleaning and part replacement, making it a cost-effective secondary process tool for mature power semiconductor production lines.

PVA TePla Technics 660 edge isolation plasma etcher

PVA TePla Technics 660 Main Specifications

ManufacturerPVA TePla / Technics
Model660
Equipment TypeLow-Pressure Microwave Plasma Etching System
Configured ProcessSolar Cell Edge Isolation Etching
Equipment Year2008, according to the available equipment listing
Recorded Operating Hours16 hours, according to the available equipment listing
Plasma Frequency2.45 GHz
Microwave Power0–1,000 W
Process Chamber MaterialAluminum
Chamber Volume64 L
Chamber Inner Dimensions400 × 400 × 400 mm
Installed Process Gas InputsThree MFC-controlled gas inputs, according to the equipment listing
Stage350 mm diameter stage option, according to the equipment listing
Vacuum ConnectionDN 63 ISO K
Base PressureApproximately 2 × 10-2 mbar
Process PressureApproximately 0.2–2 mbar
Evacuation TimeApproximately 1 minute
Included Vacuum PumpEBARA oil-free dry pump, according to the equipment listing
Electrical Supply230 V, single-phase, 16 A, 50/60 Hz
Approximate Dimensions1,050 × 1,720 × 770 mm
Approximate Weight180 kg, excluding the vacuum pump
ConditionUsed semiconductor equipment
AvailabilitySubject to current stock, inspection and configuration confirmation

PVA TePla 660 microwave plasma chamber and 350 mm stage

PVA TePla Technics 660 installed process configuration