The 2100 hS is the first model in the 2100 GENS family, and its design choices reflect a clear priority: throughput without compromise on placement consistency. The platform introduces a new "light & rigid" pick-and-place structure paired with advanced trajectory control and an optional liquid cooling system on the Y-axis, all aimed at reducing cycle time while holding accuracy at high speed. The Phi-Y concept, which combines rotational and linear movements, is part of this same engineering direction.
The practical implication is a machine that covers mainstream package families—QFN, TSOP, QFP, BGA, CSP-BGA, SiP-BGA, FBGA, and LGA—where the process window is already established and the production challenge is sustaining throughput and yield over extended runs.
Platform Boundaries and Successor Relationship
The 2100 hS is a previous-generation platform within the 2100 family. Besi has since introduced the 2100 hS ix, which targets the same high-speed epoxy die attach space but with tighter accuracy options (down to 12 µm in Accuracy Mode, and 10 µm with Up Looking Vision) and a narrower die size range (0.15 to 8 mm). The hS itself supports die sizes up to 20 mm, which positions it for applications that may not require the tighter placement of the iX generation.
For buyers evaluating the hS today, the relevant question is whether the accuracy window and die size range align with the current product roadmap. If the process is stable epoxy die attach at die sizes within the hS window, the platform remains a proven production tool. If the roadmap moves toward tighter placement accuracy or smaller die, the iX generation becomes the more relevant platform.

Operating Requirements
The machine requires 208–230 VAC at 47–63 Hz, with a power rating of 800–1100 VA. Compressed air supply must be at minimum 5.2 bar, vacuum at minimum -0.75 bar, and nitrogen blow between 1.8 and 6 bar. These are standard for the equipment class but need to be accounted for at facility planning stage.
As a mature platform, common parts and service channels are generally accessible, though some specialized components may require refurbishment or alternative sourcing channels given the platform's generation.
Specifications
| Parameter | Specification |
|---|---|
| Bonding method | Epoxy |
| Cycle time | 120 ms with Liquid Cooling option |
| Productivity | Up to 18,500 UPH |
| Placement accuracy | 20 µm @ 3σ standard; 15 µm @ 3σ in High Accuracy Mode |
| Die size range | 0.25 mm (with Small Die Kit) to 20 mm |
| Wafer size | 4" to 12" (on 8" or 12" wafer frames) |
| Leadframe dimensions | Length 90 to 300 mm; Width 23 to 100 mm |
| Bond force | 0.2 to 20 N |
| Footprint & weight | 1785 × 1448 × 1400 mm; approx. 1,400 kg |